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| PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-60 60 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The device employs 0.9 m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES * Push-pull type N-channel GaAs MES FET * VDS = 10.0 V operation * High output power: PO (1 dB) = 60 W TYP. * High linear gain: GL = 12.0 dB TYP. * High power added efficiency: add = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz ORDERING INFORMATION (PLAN) Part Number NES2427P-60 Package T-92 Supplying Form ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative. Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14997EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan (c) 2000 NES2427P-60 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25 C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO VGDO ID IG Ptot Note Ratings 15 -7 -18 54 360 200 175 -65 to +175 Unit V V V A mA W C C Tch Tstg Note TC = +25 C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compression Channel Temperature Set Drain Current Gate Resistance Case Temperature Symbol VDS Gcomp Tch IDset Rg TC Note 1 Test Conditions MIN. - - - TYP. - - - 12.0 2.5 - MAX. 10.0 3.0 +150 12.0 2.5 60 Unit V dB C A C VDS = 10.0 V, RF OFF - - - Note 2 Notes 1. Rg is the series resistance between the gate supply and the FET gate. 2. TC MAX. = 60 C is at the condition of IDset = 12.0 A. TC (C) Tch MAX. (150 C) - VDS (V) x IDset (A) x Rth MAX. (C/W) ELECTRICAL CHARACTERISTICS (TA = +25 C) Parameter Saturated Drain Current Pinch-off Voltage Thermal Resistance Gain 1 dB Compression Output Power Drain Current Power Added Efficiency Linear Gain 3rd Order Intermodulation Distortion Symbol IDSS Vp Rth PO (1 dB) ID Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 168 mA Channel to Case f = 2.50, 2.70 GHz, VDS = 10.0 V, Rg = 2.5 , IDset = 12.0 A Total (RF OFF) Note 1 MIN. - -4.0 - 47.0 - - 10.0 TYP. 36.0 -2.1 0.65 48.0 16.0 35 12.0 -48 MAX. - - 0.75 - - - - - Unit A V C/W dBm A % dB dBc add GL Note 2 IM3 f = 1 MHz, Pout = 39 dBm (2 tones total) - Notes 1. IDset = 6.0 A each drain 2. Pin = 32 dBm 2 Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 TYPICAL CHARACTERISTICS (TA = +25 C) f = 2.50 GHz f = 2.70 GHz OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER 55 50 45 40 35 30 25 10 VDS = 10.0 V, f = 2.50 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 Pout 60 Power Added Efficiency add (%) OUTPUT POWER, POWER ADDED EFFICIENCY vs. INPUT POWER 55 50 45 40 35 30 25 10 VDS = 10.0 V, f = 2.70 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 Pout 60 50 40 30 20 10 0 45 Power Added Efficiency add (%) Output Power Pout (dBm) add 40 30 20 10 0 45 Output Power Pout (dBm) 50 add 15 20 25 30 35 40 15 20 25 30 35 40 Input Power Pin (dBm) Input Power Pin (dBm) DRAIN CURRENT, GATE CURRENT vs. INPUT POWER 20 18 Drain Current ID (A) DRAIN CURRENT, GATE CURRENT vs. INPUT POWER 120 100 Gate Current IG (mA) VDS = 10.0 V, f = 2.50 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 20 18 Drain Current ID (A) VDS = 10.0 V, f = 2.70 GHz (1 tone) IDset = 12.0 A (RF OFF), Rg = 2.5 120 100 80 60 40 IG 20 0 Gate Current IG (mA) 16 14 12 10 8 6 10 15 20 25 30 ID 80 60 40 IG 20 0 35 40 -20 45 16 14 12 10 8 6 10 15 20 25 30 ID 35 40 -20 45 Input Power Pin (dBm) Input Power Pin (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) 3rd Order Intermodulation Distortion IM3 (dBc) 3RD ORDER INTERMODULATION DISTORTION, DRAIN CURRENT vs. 2 TONES OUTPUT POWER 0 -10 -20 -30 -40 IM3 -50 -60 -70 20 25 30 35 40 45 6 4 2 50 VDS = 10.0 V, f = 2.50 GHz (2 tones) IDset = 12.0 A (RF OFF), Rg = 2.5 ID Drain Current ID (A) 3RD ORDER INTERMODULATION DISTORTION, DRAIN CURRENT vs. 2 TONES OUTPUT POWER 0 -10 -20 -30 -40 IM3 -50 -60 -70 20 25 30 35 40 45 6 4 2 50 VDS = 10.0 V, f = 2.70 GHz (2 tones) IDset = 12.0 A (RF OFF), Rg = 2.5 ID 12 10 8 Drain Current ID (A) 16 14 12 10 8 16 14 2 tones Output Power Pout (dBm) 2 tones Output Power Pout (dBm) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet P14997EJ1V0DS00 3 NES2427P-60 PACKAGE DIMENSIONS T-92 (UNIT: mm) 35.20.3 9.70.3 45 G1 G2 2.40.3 S S R1.20.3 D1 D2 4.75 MAX. 1.80.2 4.00.3 31.60.3 2.40.2 PIN CONNECTIONS G1, G2 : Gate D1, D2 : Drain S : Source 4 Preliminary Data Sheet P14997EJ1V0DS00 17.40.3 8.0 NES2427P-60 RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE (1) Fix to heat sink or mount surface completely with screws at the four holes of the flange. (2) The recommended torque strength of the screws is 30 N typical using M2.3 type screws. (3) The recommended flatness of the mount surface is less than 10 m (roughness of surface is ). RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Pin temperature: 260 C or below, Time: 5 seconds or less (per pin row) Recommended Condition Symbol - For soldering For details of recommended soldering conditions, please contact your local NEC sales office. Preliminary Data Sheet P14997EJ1V0DS00 5 NES2427P-60 [MEMO] 6 Preliminary Data Sheet P14997EJ1V0DS00 NES2427P-60 [MEMO] Preliminary Data Sheet P14997EJ1V0DS00 7 NES2427P-60 CAUTION The great care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. * The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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